US5U2
Transistors
Electrical characteristics curves
1000
100
Ta=25 ° C
f=1MHz
V GS =0V
Ciss
1000
100
tf
Ta=25 ° C
V DD =15V
V GS =10V
R G =10 ?
Pulsed
10
Ta=25 ° C
9 V DD =15V
I D =1.4A
8 R G =10 ?
Pulsed
7
6
td(off)
5
4
10
Coss
Crss
10
td(on)
3
2
tr
1
1
0.01
0.1
1
10
100
1
0.01
0.1
1
10
0
0
1
2
3
DRAIN-SOURCE VOLTAGE : V DS (V)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
DRAIN CURRENT : I D (A)
Fig.2 Switching Characteristics
TOTAL GATE CHARGE : Qg (nC)
Fig.3 Dynamic Input Characteristics
10
V DS =10V
Pulsed
1000
900
Ta=25 ° C
Pulsed
10
V GS =0V
Pulsed
1
0.1
Ta=125 ° C
75 ° C
25 ° C
? 25 ° C
800
700
600
500
I D =0.7A
I D =1.4A
1
Ta=125 ° C
75 ° C
25 ° C
? 25 ° C
400
0.1
0.01
300
200
100
0.001
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
0
2
4
6
8
10
0.01
0.0
0.5
1.0
1.5
GATE-SOURCE VOLTAGE : V GS (V)
Fig.4 Typical Transfer Characteristics
GATE-SOURCE VOLTAGE : V GS (V)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-source Voltage
SOURCE-DRAIN VOLTAGE : V SD (V)
Fig.6 Source Current vs.
Source-Drain Voltage
10000
V GS =10V
10000
V GS =4.5V
10000
V GS =4V
Pulsed
Pulsed
Pulsed
1000
Ta=125 ° C
75 ° C
25 ° C
? 25 ° C
1000
Ta=125 ° C
75 ° C
25 ° C
? 25 ° C
1000
Ta=125 ° C
75 ° C
25 ° C
? 25 ° C
100
10
100
10
100
10
0.01
0.1
1
10
0.01
0.1
1
10
0.01
0.1
1
10
DRAIN CURRENT : I D (A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current ( Ι )
DRAIN CURRENT : I D (A)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current ( ΙΙ )
DRAIN CURRENT : I D (A)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current ( ΙΙΙ )
Rev.B
3/4
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